EXTREMELY FLAT SURFACES BY LIQUID-PHASE EPITAXY

被引：23

作者：

CHERNOV, AA

SCHEEL, HJ

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST MICRO & OPTOELECTR,CH-1007 LAUSANNE,SWITZERLAND

[2] RUSSIAN ACAD SCI,INST CRYSTALLOG,MOSCOW 117333,RUSSIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 149卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(95)00014-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

By analysis of liquid phase epitaxial (LPE) growth experiments of GaAs multiIayer structures, the incorporation rates at elementary growth steps (kinetic coefficients) are estimated. Conditions are presented to prepare large singular surfaces with several micrometers distances between regular elementary steps. Such quasi atomically flat surfaces may become important for applications in semiconductor and superconductor technologies, in surface physics and catalysis, as reference planes, and also as substrates for fabrication of extremely homogeneous layers and perfect superlattices.

引用

页码：187 / 195

页数：9

共 33 条

[1]

BRAGINSKI AI, 1991, IN PRESS P SQUID

[2] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].