DE HAAS - VAN ALPHEN AND SHUBNIKOV - DE HAAS EFFECT IN N-HGSE IN STRONG MAGNETIC FIELDS

被引:28
作者
BLIEK, LM
LANDWEHR, G
机构
[1] Physikalisch-Technische Bundesanstalt, Braunschweig
[2] Physikalisches Institut, Universität Würzburg
来源
PHYSICA STATUS SOLIDI | 1969年 / 31卷 / 01期
关键词
D O I
10.1002/pssb.19690310113
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The De Haas ‐ Van Alphen and the Shubnikov ‐ De Haas effect are measured on oriented samples of single‐crystalline HgSe with electron concentrations between 1.08 and 3.26 × 1018 cm−3 in pulsed magnetic fields up to 210 kOe. The results in strong fields show that the beating of the oscillations observed at smaller fields is due to inversion asymmetry splitting rather than to anisotropy of the Fermi surface. A pronounced spin splitting of about 1/4 of a period is observed, allowing the evaluation of the Landé factor of the conduction electrons. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:115 / &
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