DIRECT MEASUREMENT OF THERMOEFFECT INFLUENCE ON RESIST SENSITIVITY IN EBL

被引：7

作者：

BABIN, SV

KOSTITSH, I

SVINTSOV, AA

机构：

[1] Institute of Microelectronics Technology, the USSR Academy of Sciences, 142432 Chernogolovka, Moscow distr.

[2] Institute of Technical Cybernetics, Bratislava

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90012-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Measurements of dose characteristics of PMMA were performed with various resist temperatures. The quantitative data shows sensitivity changes with the temperature increase. The model of resist heating effect is presented.

引用

页码：41 / 44

页数：4

共 4 条

[1]

Eib, Kvitek, Thermal distribution and the effect on resist sensitivity in electron-beam direct write, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 7 B, (1989)

[2]

Harada, Sugawara, J. Appl. Polymer. Sci., 27, (1982)

[3]

Murai, Okazaki, Saito, Dan, The effect of acceleration voltage on linewidth control with a variable-shaped electron beam system, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5 B, (1987)

[4]

Abe, Ohta, Wada, Takigawa, Resist heating effect in direct electron beam writing, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 6 B, (1988)

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