Laser-induced fluorescence measurements on the C(2)Sigma(+)-X(2)Pi(r) transition of the CH radical produced by a microwave excited process plasma

Laser-induced fluorescence (LIF) measurements were made in a micrwave (2.45GHz) excned a-C:H deposnion plasma using thew beam of a frequency-doubled cw dye laser. Miscellaneous vibrational and rotational transitions of the electronically excited CH band system C(2)Sigma(+)-X(2)Pi(r) at lambda approximate to 314 nm were investigated. Spatially resolved rotational, vibrational and translational temperatures as well as drift velocities and densities of ground state CH molecules have been determined. The most important molecular constants for the transitions under investigation have been compiled and the evaluation procedured LIF signals is described. Deposition rates of aC:H layers are measured by observing me temporal development of the interference fringe system on the substrate. me growth rate is compared with the CH flux m me target. A simplified model of the discharge plasma explains the measured data in a roughly quantitative manner.