NEGATIVE-RESISTANCE DIODE POWER AMPLIFICATION

被引：35

作者：

HINES, ME

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1970.16916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1 / &

共 19 条

[1] A STUDY OF LOCKING PHENOMENA IN OSCILLATORS [J].

ADLER, R .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1946, 34 (06) :351-357

[2] APPROXIMATE LARGE-SIGNAL ANALYSIS OF IMPATT OSCILLATORS [J].

BLUE, JL .

BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (02) :383-+

[3]

BUTCHER NP, 1966, PHYS LETTERS, V21, P489

[4] LSA OSCILLATOR-DIODE THEORY [J].

COPELAND, JA .

[5]

COPELAND JA, 1967, IEEE T ELECTRON DEV, VED14, P461

[6]

COPELAND JA, 1967, IEEE T ELECTRON DEV, VED14, P497

GOLAY, MJE .

[8]

HADDAD GI, 1969, RADCTR6918 ROM AIR D

[9] X-BAND POWER AMPLIFICATION USING GUNN EFFECT DIODES [J].

HINES, ME .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (09) :1590-+

[10]

HINES ME, 1969, IEEE J SOLID STATE C, VSC 4, P370