THE AU/CDTE INTERFACE - AN INVESTIGATION OF ELECTRICAL BARRIERS BY BALLISTIC ELECTRON-EMISSION MICROSCOPY

被引：41

作者：

FOWELL, AE

WILLIAMS, RH

RICHARDSON, BE

SHEN, TH

机构：

[1] Dept. of Phys., Univ. of Wales Coll. of Cardiff

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 04期

关键词：

D O I：

10.1088/0268-1242/5/4/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe the application of ballistic electron emission microscopy to measure electrical barriers with nm spatial resolution. They show that the interface between Au and chemically treated CdTe is non-uniform and that problems of reproducibility are associated with small patches at the interface where the barriers are low.

引用

页码：348 / 350

页数：3

共 6 条

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[3]

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[4]

Kaiser WJ, Bell LD, Phys. Rev. Lett., 60, 14, (1988)

[5]

Kuech TF, J. Appl. Phys., 52, 7, (1981)

[6]

Kurtin S, McGill TC, Mead CA, Phys. Rev. Lett., 22, 26, (1969)

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