BA(MG, TA)O3-BASNO3 HIGH-Q DIELECTRIC RESONATOR

Dense ceramics with the chemical formula (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3(X = 0-0.15) are prepared for use as dielectric resonators. The obtained dielectric constant and Q value for Ba(Mg1/3Ta2/3)O3 were 24 and 43000 at 10 GHz, respectively. As X increased from 0 to 0.15, the temperature coefficient of resonant frequency decreased gradually from 5.4 to -0.5 ppm/degrees-C. At X = 0.05, the Q value decreased drastically, and at X = 0.10-0.15, the Q value increased to 33000 at 10 GHz. The specimens were investigated by scanning electron microscopy and X-ray diffraction analysis. It is found that Q improvement is not always dependent on the ordering structure of (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3.