VACANCY DIFFUSION ON SI(100)-(2X1)

被引：33

作者：

ZHANG, ZY ^{[1
]}

CHEN, H ^{[1
]}

BOLDING, BC ^{[1
]}

LAGALLY, MG ^{[1
]}

机构：

[1] CRAY RES INC,EAGAN,MN 55121

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 22期

关键词：

D O I：

10.1103/PhysRevLett.71.3677

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The mechanism of migration of missing-dimer vacancies on Si(100)-(2x1) has been investigated theoretically. The migration involves a wavelike concerted motion of four atoms: Two rebonded atoms in the second layer move up to the top layer, while two dimerized atoms in the top layer simultaneously descend into the second layer. The migration is extremely anisotropic, with the fast direction along the dimer rows. The predicted direction of fast diffusion and the activation energy are consistent with experiment.

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页码：3677 / 3680

页数：4

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