INFLUENCE OF EXCITON LOCALIZATION ON RECOMBINATION LINE-SHAPES - INXGA1-XAS/GAAS QUANTUM-WELLS AS A MODEL

被引:91
作者
SCHNABEL, RF
ZIMMERMANN, R
BIMBERG, D
NICKEL, H
LOSCH, R
SCHLAPP, W
机构
[1] MAX PLANCK ARBEITSGRP HALBLEITERTHEORIE, O-1086 BERLIN, GERMANY
[2] TECH UNIV BERLIN, INST FESTKORPERPHYS I, W-1000 BERLIN 12, GERMANY
[3] TELEKOM FORSCHUNGSINST FTZ, W-6100 DARMSTADT, GERMANY
关键词
D O I
10.1103/PhysRevB.46.9873
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present an approach for the optical interband density and for luminescence line shapes of quantum-well excitons by considering the localization of the excitonic center of mass due to potential fluctuations. The localization-induced violation of the K = 0 selection rule effects considerably the high-energy side of the recombination line shape. Perfect agreement between line-shape simulations and photoluminescence spectra of InxGa1-xAs/GaAs quantum wells is obtained over the full temperature range from T = 2 K up to 120 K. Furthermore, by introducing a quantitative measure of the degree of localization we find the exciton motion restricted to about 13 nm in the present case.
引用
收藏
页码:9873 / 9876
页数:4
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