CRYSTALLIZING PROCESS OF AMORPHOUS THICK-FILMS OF FERROELECTRIC LEAD GERMANATE FAMILY

被引：8

作者：

HATANO, J ^{[1
]}

MUKAIGAWA, T ^{[1
]}

UEHARA, H ^{[1
]}

GRUVERMAN, A ^{[1
]}

TAKAHASHI, K ^{[1
]}

YUKINO, K ^{[1
]}

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 9B期

关键词：

LEAD GERMANATE; RAPID QUENCHING; THICK FILM; CRYSTALLIZING PROCESS; GRAIN ORIENTATION; AMORPHOUS;

D O I：

10.1143/JJAP.33.5521

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Real-time investigation of crystallizing processes of amorphous thick films of ferroelectric lead germanate (PGO) and silicon-doped PGO (PGSO) is carried out using a high-temperature X-ray diffraction system. Two irreversible phase transitions took place near 370 degrees C and 530 degrees C on heating: the first is the crystallization from the amorphous to a metastable crystal state, and the second is from the metastable to a ferroelectric stable state of Pb5Ge3O11. Both transitions were completed very quickly, i.e., within approximately 7 and 58 min, respectively. The optimum heat-treatment conditions for fabricating well-oriented polycrystalline films were discussed together with the results of quick heating and quenching experiments.

引用

页码：5521 / 5524

页数：4

共 12 条

[1] PB5(GE,SI)3O11 FERROELECTRICS [J].