[111] DIRECT TRANSITION EXCITON AND MAGNETOREFLECTION IN GERMANIUM

被引:6
作者
LAX, B
机构
关键词
D O I
10.1103/PhysRevLett.4.511
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:511 / 513
页数:3
相关论文
共 12 条
[1]   FINE STRUCTURE IN THE ZEEMAN EFFECT OF EXCITONS IN GERMANIUM [J].
BUTTON, KJ ;
ROTH, LM ;
KLEINER, WH ;
ZWERDLING, S ;
LAX, B .
PHYSICAL REVIEW LETTERS, 1959, 2 (04) :161-162
[2]   THEORY OF THE EFFECT OF A MAGNETIC FIELD ON THE ABSORPTION EDGE IN SEMICONDUCTORS [J].
ELLIOTT, RJ ;
MCLEAN, TP ;
MACFARLANE, GG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (466) :553-565
[3]   ELECTRON SPIN RESONANCE EXPERIMENTS ON SHALLOW DONORS IN GERMANIUM [J].
FEHER, G ;
WILSON, DK ;
GERE, EA .
PHYSICAL REVIEW LETTERS, 1959, 3 (01) :25-28
[4]   GROUND STATE OF IMPURITY ATOMS IN SEMICONDUCTORS HAVING ANISOTROPIC ENERGY SURFACES [J].
LAMPERT, MA .
PHYSICAL REVIEW, 1955, 97 (02) :352-353
[5]  
LAX B, 1960, C QUANTUM ELECTRONIC
[6]  
LAX B, PROGR SEMICONDUCTORS
[7]   OPTICAL CONSTANTS OF GERMANIUM IN THE REGION-1 TO 10 EV [J].
PHILIPP, HR ;
TAFT, EA .
PHYSICAL REVIEW, 1959, 113 (04) :1002-1005
[8]  
Phillips J., 1960, J PHYS CHEM SOLIDS, V12, P208
[9]  
ROTH L, UNPUBLISHED
[10]   THEORY OF OPTICAL MAGNETO-ABSORPTION EFFECTS IN SEMICONDUCTORS [J].
ROTH, LM ;
LAX, B ;
ZWERDLING, S .
PHYSICAL REVIEW, 1959, 114 (01) :90-103