PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS SIXGE1-X-H

被引：34

作者：

OCONNOR, P ^{[1
]}

TAUC, J ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.43.311

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A transient optical absorption has been observed at low temperatures in amorphous SixGe1-x:H excited by laser. The temperature and laser-intensity dependences were found to be similar to those observed for the photoinduced ESR signal seen in amorphous Si: H and Ge: H. It is shown that most characteristics of the induced absorption can be described in terms of the polaron theory. © 1979 The American Physical Society.

引用

页码：311 / 314

页数：4

共 25 条

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