ELECTRICAL AND THERMAL-PROPERTIES OF NEUTRON-TRANSMUTATION-DOPED GE AT 20-MK

被引:113
作者
WANG, N [1 ]
WELLSTOOD, FC [1 ]
SADOULET, B [1 ]
HALLER, EE [1 ]
BEEMAN, J [1 ]
机构
[1] UNIV CALIF BERKELEY,DEPT MAT SCI & MINERAL ENGN,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 06期
关键词
D O I
10.1103/PhysRevB.41.3761
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects. © 1990 The American Physical Society.
引用
收藏
页码:3761 / 3768
页数:8
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