CHARGED-PARTICLE RADIATION DAMAGE OBSERVED AS DIMPLING OF THIN SILICON TARGETS

被引:9
作者
MEEK, RL
GIBSON, WM
SELLSCHOP, JP
机构
关键词
D O I
10.1063/1.1653528
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:535 / +
页数:1
相关论文
共 25 条
[2]   X-RAY INVESTIGATION OF LATTICE DEFORMATIONS IN SILICON INDUCED THROUGH HIGH-ENERGY ION IMPLANTATION [J].
BONSE, U ;
HART, M ;
SCHWUTTKE, GH .
PHYSICA STATUS SOLIDI, 1969, 33 (01) :361-+
[3]   NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS [J].
BORDERS, JA .
APPLIED PHYSICS LETTERS, 1971, 18 (01) :16-&
[4]   ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON [J].
CROWDER, BL ;
TITLE, RS ;
BRODSKY, MH ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1970, 16 (05) :205-&
[5]   IMPURITY EFFECTS ON ANNEALING OF RADIATION DEFECTS IN P-TYPE SILICON [J].
FANG, PH ;
TARKO, H ;
DREVINSK.PJ ;
ILES, P .
APPLIED PHYSICS LETTERS, 1970, 17 (10) :426-&
[6]   RADIATION DAMAGE EXPERIMENTS AND THE NATURE OF THERMAL SPIKES IN III-V-COMPOUNDS [J].
GONSER, U ;
OKKERSE, B .
PHYSICAL REVIEW, 1958, 109 (03) :663-667
[7]   RADIATION DAMAGE EXPERIMENTS IN III-V-COMPOUNDS [J].
GONSER, U ;
OKKERSE, B .
PHYSICAL REVIEW, 1957, 105 (02) :757-759
[8]   LENGTH CHANGE OF COPPER AND ALUMINUM AFTER ELECTRON IRRADIATION [J].
HANADA, R ;
SNEAD, CL ;
KAUFFMAN, JW .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) :3694-&
[9]  
Irving S. M., 1969, Semiconductor silicon, P433
[10]   RADIATION-INDUCED EXPANSION OF SEMICONDUCTORS [J].
KLEITMAN, D ;
YEARIAN, HJ .
PHYSICAL REVIEW, 1957, 108 (03) :901-901