NATURAL SUPERSTEP FORMED ON GAAS VICINAL SURFACE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：60

作者：

FUKUI, T

SAITO, H

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 03期

关键词：

AlAs; Crystal growth; GaAs; Metal organic chemical vapor deposition; Microscopy; Monolayer step; Thin film; Transmission electron;

D O I：

10.1143/JJAP.29.L483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs surfaces and AlAs/GaAs interfaces grown on GaAs vicinal (001) substrates by metalorganic chemical vapor deposition (MOCVD) are observed by transmission electron microscopy (TEM). Under high As pressure, step flow growth is obtained. However, under very low As pressure, supersteps with about 20-monolayer step height are formed during AlAs/GaAs multilayer growth. The mechanisms of superstep formation are discussed. These supersteps can be applied to the new-type quantum well wires with 10 nm dimension without using patterned substrates. © 1990 The Japan Society of Applied Physics.

引用

页码：L483 / L485

页数：3

共 5 条

[1] GENERATION OF MACROSCOPIC STEPS ON PATTERNED (100) VICINAL GAAS-SURFACES [J].