TRANSMISSION ELECTRON-MICROSCOPY STUDY OF CHEMICAL-VAPOR-DEPOSITED DIAMOND BY A SIDE-VIEW METHOD

被引：7

作者：

GOTO, Y

KURIHARA, K

SAWAMOTO, Y

KITAKOHJI, T

机构：

[1] Fujitsu Laboratories, Ltd., Atsugi 243-01

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.106982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The initial growth of synthetic diamond by dc plasma-jet chemical vapor deposition was studied with a transmission electron microscope by a side-view method. Both diamond particles and beta-SiC particles were observed on the Si substrate. Si atoms in the substrate were etched clearly by the plasma jet except beneath diamond particles.

引用

页码：172 / 174

页数：3

共 7 条

[1]

KAMO M, 1983, J CRYST GROWTH, V62, P624

[2] HIGH-RATE SYNTHESIS OF DIAMOND BY DC PLASMA-JET CHEMICAL VAPOR-DEPOSITION [J].