DENSITY OF GLOW-DISCHARGE AMORPHOUS-SILICON FILMS DETERMINED BY SPECTROSCOPIC ELLIPSOMETRY

被引：31

作者：

HAAGE, T

SCHMIDT, UI

FATH, H

HESS, P

SCHRODER, B

OECHSNER, H

机构：

[1] Fachbereich Physik und Forschungsschwerpunkt Materialwissenschaften, Universität Kaiserslautern, 67653 Kaiserslautern

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 08期

关键词：

D O I：

10.1063/1.357267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric function of thin-film hydrogenated amorphous silicon (a-Si:H) grown on fused silica at different substrate temperatures has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data is based on a tetrahedron model that takes into account the influence of hydrogen incorporation in the amorphous network. It is shown that the film density can be derived from an accurate data interpretation, whereas the maximum value of the imaginary part of the dielectric function epsilon2max and the void volume fraction are not porportional to the density of a-Si:H films.

引用

页码：4894 / 4896

页数：3

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