Defects in ion implanted and electron irradiated MgO and Al2O3

被引：48

作者：

Averback, RS

Ehrhart, P

Popov, AI

vonSambeek, A

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

[2] UNIV LATVIA, INST SOLID STATE PHYS, LV-1063 RIGA, LATVIA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1995年 / 136卷 / 1-4期

基金：

美国能源部;

关键词：

MgO; Al2O3; ion implantation; electron irradiation; F-centers; defect agglomerates;

D O I：

10.1080/10420159508218815

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

MgO and Al2O3 crystals have been implanted with Ne ions at temperatures between 90 K and 720 K and the damaged layers were investigated by optical absorption spectroscopy and X-ray diffraction. The damage production is discussed in terms of the number of F-centers, of the change of the lattice parameter, and of the diffuse scattering intensity close to Bragg reflections. The stability of the defects was tested in addition by subsequent subthreshold e(-)-irradiations. No effect of an applied electric field on the defect production is observed for both oxides.

引用

页码：169 / 173

页数：5