CHARGE-DISTRIBUTIONS IN SILICON-NITRIDE OF MNOS DEVICES

被引:8
作者
ENDO, N
机构
关键词
D O I
10.1016/0038-1101(78)90353-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1153 / 1156
页数:4
相关论文
共 11 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]   THEORY OF MNOS MEMORY TRANSISTOR [J].
CHANG, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) :511-518
[3]  
FERRISPRABHU AV, 1973, IBM J RES DEV MAR
[4]  
GOODMAN AM, 1970, RCA REV, V342
[5]  
LUNDSTROM I, 1972, IEEE T ELECTRON DEV, V19, P826
[6]   SIMPLE TECHNIQUE FOR DETERMINATION OF CENTROID OF NITRIDE CHARGE IN MNOS STRUCTURES [J].
MAES, H ;
VANOVERSTRAETEN, RJ .
APPLIED PHYSICS LETTERS, 1975, 27 (05) :282-284
[7]  
NABER CT, 1973, 2ND INT S SIL MAT SC, P401
[8]  
ROSS EC, 1969, RCA REV, V30, P366
[9]   CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J].
WHITE, MH ;
CRICCHI, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1280-&
[10]   MEASUREMENTS OF CHARGE PROPAGATION IN SI3N4 FILMS [J].
YUN, BH .
APPLIED PHYSICS LETTERS, 1974, 25 (06) :340-342