NUMERICAL INVESTIGATION OF THYRISTOR FORWARD CHARACTERISTIC

被引：6

作者：

CORNU, J

LIETZ, M

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1972.17527

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：975 / &

共 16 条

[1] ACCURATE NUMERICAL STEADY-STATE SOLUTIONS FOR A DIFFUSED 1-DIMENSIONAL JUNCTION DIODE
ARANDJELOVIC, V
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 865 - +
[2] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD
CAUGHEY, DM
THOMAS, RE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +
[3] CHOO SC, 1970, IEEE T ELECTRON DEV, VED17, P647
[4] CHOO SC, 1971, IEEE T ELECTRON DEVI, VED18, P574
[5] ANALYTICAL MODEL FOR P-N JUNCTIONS UNDER HIGH-INJECTION CONDITIONS
CORNU, J
[J]. ELECTRONICS LETTERS, 1971, 7 (18) : 509 - &
[6] AN ACCURATE NUMERICAL STEADY-STATE 1-DIMENSIONAL SOLUTION OF P-N JUNCTION
DEMARI, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (01) : 33 - +
[7] THE HIGH CURRENT LIMIT FOR SEMICONDUCTOR JUNCTION DEVICES
FLETCHER, NH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (06): : 862 - 872
[8] POWER RECTIFIERS AND TRANSISTORS
HALL, RN
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1512 - 1518
[9] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES
HERLET, A
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (08) : 717 - &
[10] Hoffmann A., 1969, Scientia Electrica, V15, P1