ULTRAVIOLET PHOTOCONDUCTIVE DETECTORS IN ZN3P2

被引：8

作者：

IRWIN, KG

KOPEIKA, NS

HUNSPERGER, RG

机构：

[1] Department of Electrical Engineering, University of Delaware, Newark

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 22期

关键词：

Photodetectors; Thin-film devices;

D O I：

10.1049/el:19790510

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductive detectors with relatively flat response to wavelengths as short as 2500 Å have been fabricated in thin films of zinc phosphide deposited by the close-space-transport method on to mica substrates. Responsivity at 2527 Å was 0.13 A/W. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：718 / 718

页数：1