EPITAXIAL LITAO3 THIN-FILMS BY PULSED-LASER DEPOSITION

被引：96

作者：

AGOSTINELLI, JA ^{[1
]}

BRAUNSTEIN, GH ^{[1
]}

BLANTON, TN ^{[1
]}

机构：

[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14652

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.110374

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial LiTaO3 thin films having excellent crystalline properties have been achieved on (0001)-sapphire substrates using the technique of pulsed laser deposition. X-ray diffraction analysis revealed that completely single-phase c-oriented LiTaO3 films were produced. X-ray rocking curve analysis showed that the range of misalignment of the c-axis direction was about 0.2-degrees. Ion channeling studies indicated a minimum backscattering yield of only 4.9%. Channeling also revealed an improvement in crystalline perfection as a function of distance above the interface with the sapphire substrate. Optical waveguiding with losses on the order of 1 dB/cm was demonstrated.

引用

页码：123 / 125

页数：3

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