The Ultimate By-Products of Stripping Photoresist in an Oxygen Plasma

被引:25
作者
Reichelderfer, R. F. [1 ]
Welty, J. M. [1 ]
Battey, J. F. [1 ]
机构
[1] Int Plasma Corp, Hayward, CA 94544 USA
关键词
semiconductor processing; atomic oxidation of hydrocarbons; sequential oxidation of solid hydrocarbons;
D O I
10.1149/1.2133197
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Evidence is presented that the final products of stripping an isoprene photoresist in an oxygen plasma are primarily oxides of carbon and water. The by-product gases are trapped in the exhaust of the reactor and weighed. The results are consistent with the conclusion that essentially all of the hydrogen in the photoresist becomes water and roughly half of the carbon becomes carbon dioxide. Presumably the other half becomes carbon monoxide which passed through the liquid nitrogen trap as a vapor.
引用
收藏
页码:1926 / 1927
页数:3
相关论文
共 5 条
[1]   REDUCTION OF PHOTORESIST STRIPPING RATES IN AN OXYGEN PLASMA BY BY-PRODUCT INHIBITION AND THERMAL MASS [J].
BATTEY, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :147-152
[2]   DESIGN CRITERIA FOR UNIFORM REACTION-RATES IN AN OXYGEN PLASMA [J].
BATTEY, JF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :140-146
[3]   EFFECTS OF GEOMETRY ON DIFFUSION-CONTROLLED CHEMICAL-REACTION RATES IN A PLASMA [J].
BATTEY, JF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) :437-441
[4]  
BERSIN RL, 1970, SOLID STATE TECHNOL, V13, P39
[5]  
IRVING SM, 1966, P KOD PHOT SEM, V2, P26