HIGH-TEMPERATURE ANNEALING CHARACTERISTICS OF TUNGSTEN AND TUNGSTEN NITRIDE SCHOTTKY CONTACTS TO GAAS UNDER DIFFERENT ANNEALING CONDITIONS

被引：29

作者：

YU, KM

JAKLEVIC, JM

HALLER, EE

CHEUNG, SK

KWOK, SP

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV ENGN,BERKELEY,CA 94720

[2] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80908

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1284 / 1291

页数：8

共 25 条

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