ION-IMPLANTATION IN III-V COMPOUNDS

被引：43

作者：

EISEN, FH

机构：

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期

关键词：

D O I：

10.1080/00337578008209195

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：99 / 115

页数：17

共 75 条

[1]

BARROWCLIFF EE, 1977 INT EL DEV M WA, P559

[2] HIGH-EFFICIENCY ION-IMPLANTED LO-HI-LO GAAS IMPATT DIODES [J].

BOZLER, CO ;

DONNELLY, JP ;

MURPHY, RA ;

LATON, RW ;

SUDBURY, RW ;

LINDLEY, WT .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :123-125

[3]

CAMPBELL AB, 1973, RADIAT EFF, V17, P19

[4] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

CAMPISANO, SU ;

CATALANO, I ;

FOTI, G ;

RIMINI, E ;

EISEN, F ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :485-488

[5] ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS1-XPX [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

STREETMAN, BG .

SOLID-STATE ELECTRONICS, 1976, 19 (11) :961-964

[6] PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

VAIDYANATHAN, KV ;

MCLEVIGE, WV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1975, 27 (10) :567-569

[7]

COMAS J, 1977, ION IMPLANTATION SEM, P141

[8] LOW-RESISTIVITY N-TYPE LAYERS IN INASXP1-X BY ION-IMPLANTATION [J].

DAVIES, DE ;

KENNEDY, JK ;

LOWE, LF .

ELECTRONICS LETTERS, 1975, 11 (19) :462-463

[9] ION-IMPLANTED N-TYPE AND P-TYPE LAYERS IN INPA [J].

DONNELLY, JP ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :418-420

[10] SILICON-ION-IMPLANTED AND SELENIUM-ION-IMPLANTED GAAS REPRODUCIBLY ANNEALED AT TEMPERATURES UP TO 950DEGREESC [J].

DONNELLY, JP ;

LINDLEY, WT ;

HURWITZ, CE .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :41-43

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