FIELD-INDUCED RESISTIVITY IN CRYSTALLINE YBA2CU3O7-DELTA - EVIDENCE FOR NANO-SCALE JUNCTION STRUCTURES

被引:5
作者
BLACKSTEAD, HA
KEIFFER, DG
LAN, MD
LIU, JZ
机构
[1] UNIV CALIF DAVIS, DEPT PHYS, DAVIS, CA 95616 USA
[2] LOYOLA UNIV, NEW ORLEANS, LA 70118 USA
关键词
D O I
10.1006/spmi.1993.1056
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have carried out a series of measurements of the resistivity of a high quality single crystal of Y-Ba-Cu-O, near the superconducting transition temperature, as a function of field varying to a maximum of 5 T applied in the a-b plane of the crystal. The results of the measurements are described accurately in terms of a model for phase-slip resistivity given by Tinkham which features phase-slip dissipation in small Josephson junctions. Since this is a crystal, the junctions are not present as a consequence of grain boundaries, but are believed to be a consequence of defects in oxygen (vacancy) ordering in the charge reservoir layers. As a result, the junctions are believed to be intrinsic to the material. The defects which give rise to the junctions are likely candidates for intrinsic pinning centers. This model is compared to a vortex-liquid state model discussed by Chien et al. © 1993 Academic Press. All rights reserved.
引用
收藏
页码:279 / 284
页数:6
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