Photoinduced defects in CdS-doped glasses

被引：4

作者：

Miyoshi, T ^{[1
]}

Towata, K ^{[1
]}

Matsuki, H ^{[1
]}

Matsuo, N ^{[1
]}

Kaneda, T ^{[1
]}

机构：

[1] UBE TECH COLL,UBE,YAMAGUCHI 755,JAPAN

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

photodarkening; semiconductor; microcrystal; quantum dot; luminescence; ESR;

D O I：

10.4028/www.scientific.net/MSF.196-201.573

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoinduced defects in CdS-doped glasses were investigated using luminescence and electron spin resonance (ESR). Correlation between the intensity of ESR signal and the transient characteristics of luminescence was observed. This correlation suggests that the photoinduced centers responsible for the ESR signal cause photodarkening. The photoinduced centers are considered to be created in the interface region between CdS microcrystals and glass matrix.

引用

收藏

页码：573 / 577

页数：5

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