IMPURITY EFFECTS ON ADHESION

被引：27

作者：

HONG, T ^{[1
]}

SMITH, JR ^{[1
]}

SROLOVITZ, DJ ^{[1
]}

机构：

[1] GM CORP,RES,DEPT PHYS,WARREN,MI 48090

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.70.615

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a first-principles calculation of impurity effects on adhesion. C, O, B, and S impurities all cause a pronounced decrease in the adhesive energies of the Mo/MoSi2(001) heterophase interface. S decreases the peak interfacial strength, while C, O, and B increase it. All impurities increase interfacial spacing in proportion to their covalent radii. Impurity mechanisms are identified.

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页码：615 / 618

页数：4

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