CHARGE TRAPPING IN MOS SYSTEMS

[1] BREED DJ, TO BE PUBLISHED

[2] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[3] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[4] Many A., 1965, SEMICONDUCTOR SURFAC

[1] BREED DJ, TO BE PUBLISHED

[2] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[3] STABILIZATION OF MOS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 657 - +

[4] Many A., 1965, SEMICONDUCTOR SURFAC