ION PAIRING IN SILICON

被引：22

作者：

MAITA, JP

机构：

来源：

关键词：

D O I：

10.1016/0022-3697(58)90195-1

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：68 / 70

页数：3

共 5 条

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FULLER, CS
[J]. PHYSICAL REVIEW, 1952, 86 (01): : 136 - 137
[2] PROPERTIES OF THERMALLY PRODUCED ACCEPTORS IN GERMANIUM
FULLER, CS
THEUERER, HC
VANROOSBROECK, W
[J]. PHYSICAL REVIEW, 1952, 85 (04): : 678 - 679
[3] FULLER CS, 1954, PHYS REV, V95, P21
[4] TEMPERATURE DEPENDENCE OF THE PIEZORESISTANCE OF HIGH-PURITY SILICON AND GERMANIUM
MORIN, FJ
GEBALLE, TH
HERRING, C
[J]. PHYSICAL REVIEW, 1957, 105 (02): : 525 - 539
[5] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON
REISS, H
FULLER, CS
MORIN, FJ
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 535 - 636