THERMALLY STIMULATED CURRENTS IN HOLMIUM OXIDE THIN-FILM CAPACITORS

被引：9

作者：

WIKTORCZYK, T

机构：

[1] Institute of Physics, Technical University of Wroclaw, Wroclaw

来源：

IEEE TRANSACTIONS ON ELECTRICAL INSULATION | 1992年 / 27卷 / 04期

关键词：

Capacitors;

D O I：

10.1109/14.155802

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of experimental analysis of vacuum-evaporated aluminum/holmium oxide/aluminum thin-film thermoelectrets by means of thermally stimulated currents are presented. All measurements were carried out in the temperature range 297 to 500 K, with an automated microcomputer-controlled system. The TSD and TSP current characteristics are presented for Al/Ho2O3/Al thin-film sandwiches with the insulator film thickness ranging from 52 to to 370 nm. The TSD and TSP current plots obtained for different measurement conditions exhibit only a single peak in the temperature range 380 to 406 K. Trapping levels with activation energy of 0.5 to 0.7 eV are responsible for the observed results.

引用

页码：807 / 812

页数：6

共 15 条

[1] ANALYSIS OF THERMALLY STIMULATED PROCESSES [J].