SOME PROBLEMS IN PLASMA-ETCHING OF AL AND AL-SI ALLOY-FILMS

被引:4
作者
HIROBE, K
KUREISHI, Y
TSUCHIMOTO, T
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D O I
10.1149/1.2127330
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:2686 / 2688
页数:3
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共 6 条
[1]  
BOYD GD, 1979, 21ST EL MAT C BOULD
[2]  
HERNDON TO, 1977, 1977 KOD MICR S MONT
[3]  
Hosokawa N, 1974, JPN J APPL PHYS S, V13, P435
[4]  
IIDA A, 1979, SHINGAKU GIHO, V79, P15
[5]  
POULSEN RG, 1976, DEC P INT EL DEV M W, P205
[6]   REACTIVE ION ETCHING OF ALUMINUM AND ALUMINUM-ALLOYS IN AN RF PLASMA CONTAINING HALOGEN SPECIES [J].
SCHAIBLE, PM ;
METZGER, WC ;
ANDERSON, JP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02) :334-337