ELECTRON AND POSITRON STATES IN HGBA2CUO4

被引:15
作者
BARBIELLINI, B
JARLBORG, T
机构
[1] Département de Physique de la Matière Condensée, University of Geneva, CH-1211 Geneva 4
来源
PHYSICAL REVIEW B | 1994年 / 50卷 / 05期
关键词
D O I
10.1103/PhysRevB.50.3239
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Local-density-calculations of the electronic structure of HgBa2CuO4 have been performed with the self-consistent linear muffin-tin orbital method. The positron-density distribution and its sensitivity due to different potentials are calculated. The annihilation rates are computed in order to study the chemical bonding and to predict the Fermi-surface signal. Comparisons are made with previous calculations on other high-T(c) copper oxides concerning the Fermi-surface properties and electron-positron overlap. We discuss the possibility of observing the Fermi surface associated with the Cu-O planes in positron-annihilation experiments.
引用
收藏
页码:3239 / 3245
页数:7
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