TUNNEL-DIODE TRANSIENT ANALYSIS

被引：9

作者：

SARNOT, SL

BHATTACHARYYA, AB

机构：

[1] Solid State Physics Division Indian Institute of Technology New

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 12期

关键词：

D O I：

10.1049/el:19690209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A general analytical method has been given for switching-time calculations of a tunnel diode. The method is particularly useful for ready evaluation of switching speed under different circuit conditions, and the results show that the switching time depends on the average behaviour of the characteristics. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：275 / +

页数：1

共 9 条

[1] ALEKSANDER I, 1962, J BRIT IRE, V23, P177
[2] Chow W. F., 1964, PRINCIPLES TUNNEL DI
[3] KONONOV BN, 1961, SEMICONDUCTOR DEVICE, V7, P341
[4] KOVALEV AN, 1962, RADIO ENG ELEC PHYS, V7, P1332
[5] TUNNEL-DIODE SWITCHING TIME + ITS DEPENDENCE ON DIODE NONLINEARITIES
NARUD, JA
MEYER, CS
[J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1964, CT11 (01): : 122 - &
[6] PIPES LA, 1965, OPERATIONAL METHODS
[7] LARGE-SIGNAL CIRCUIT THEORY FOR NEGATIVE-RESISTANCE DIODES, IN PARTICULAR TUNNEL DIODES
SCHULLER, M
GARTNER, WW
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1961, 49 (08): : 1268 - &
[8] SERENSON H, 1961, RC413 IBM RES REP
[9] SIDOROV AS, 1968, SEMICONDUCTOR DEVICE, V19, P34

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