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EVALUATION OF DOPANT PROFILES AND DIFFUSION CONSTANTS BY MEANS OF ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：10
作者：
FORSTER, A
LAYET, JM
LUTH, H
机构：
[1] Institut für Schicht- und Ionentechnik (ISI) der KFA Jülich, D-5170 Jülich
来源：
APPLIED SURFACE SCIENCE | 1989年 / 41-2卷
关键词：
D O I：
10.1016/0169-4332(89)90076-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Surface plasmon losses of the conduction electrons are measured by high resolution electron energy loss spectroscopy (HREELS) on highly n-doped (P), clean Si(100) wafers. After several annealing cycles at 910°C in UHV the plasmon loss shifts to lower energy. This effect can quantitatively be described by out-diffusion of the phosphorus dopant. Using dielectric theory for the description of the scattering process diffusion profiles are evaluated and the diffusion constant of phosphorus in Si is determined. The obtained diffusion profiles are in good agreement with experimental profiles measured by SIMS. © 1989.
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页码：306 / 311
页数：6
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