NONLINEAR RESPONSE OF THE SEMICONDUCTOR QUANTUM-CONFINED STRUCTURES NEAR AND BELOW THE MIDDLE OF THE BAND-GAP

被引：24

作者：

KHURGIN, JB

机构：

[1] Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, MD

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1994年 / 11卷 / 04期

关键词：

D O I：

10.1364/JOSAB.11.000624

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The two-photon absorption coefficient and the intensity-dependent refractive index associated with it are calculated for semiconductor quantum wells and quantum wires. It is shown analytically that in the limit of large dimensions the nonlinear response of quantum-confined structures becomes isotropic and approaches the nonlinear response of the bulk semiconductor despite the different gauges used in the calculations. The theoretical results are compared with the experiment, and the practical implications are discussed.

引用

页码：624 / 631

页数：8

共 19 条

[1]

CHEMLA DS, 1984, APPL PHYS LETT, V44, P16

[2]

CINGOLANI R, 1992, PHYS REV LETT, V69, P1277

[3]

COHEN ML, 1988, ELECTRONIC STRUCTURE, P49

[4] 2-PHOTON ABSORPTION AS A LIMITATION TO ALL-OPTICAL WAVE-GUIDE SWITCHING IN SEMICONDUCTORS [J].