LINEARIZED DIFFERENTIAL TRANSCONDUCTORS IN SUBTHRESHOLD CMOS

被引：54

作者：

FURTH, PM

ANDREOU, AG

机构：

[1] Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 07期

关键词：

CMOS INTEGRATED CIRCUITS; LINEARIZATION TECHNIQUES; TRANSCONDUCTORS;

D O I：

10.1049/el:19950376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three schemes for linearising the transconductance of the basic differential pair in subthreshold CMOS are examined: (i) multiple asymmetric differential pairs, (ii) Source degeneration via symmetric diffusers, and (iii) source degeneration via a single diffuser. Using a maximally flat optimising criterion, the linear range of the basic differential pair can be increased by 4-8 times.

引用

页码：545 / 547

页数：3

共 8 条

[1]

ANDREOU AG, 1994, ANALOG VLSI SIGNAL I

[2]

[Anonymous], 1989, ANALOG VLSI NEURAL S

[3]

BOAHEN KA, 1992, ADV NEURAL INFORMATI

[4] A 4-MHZ CMOS CONTINUOUS-TIME FILTER WITH ON-CHIP AUTOMATIC TUNING [J].