QUANTUM EFFECTS IN SEMICONDUCTOR COMPONENTS

被引：2

作者：

DORDA, G ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV,D-8000 MUNICH 83,FED REP GER

来源：

PHYSICA B & C | 1988年 / 151卷 / 1-2期

关键词：

D O I：

10.1016/0378-4363(88)90177-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：273 / 278

页数：6

共 28 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] EFFECT OF LOCALIZATION ON THE HALL CONDUCTIVITY IN THE TWO-DIMENSIONAL SYSTEM IN STRONG MAGNETIC-FIELDS [J].

AOKI, H ;

ANDO, T .

SOLID STATE COMMUNICATIONS, 1981, 38 (11) :1079-1082

[3]

Bliek L., 1987, High Magnetic Fields in Semiconductor Physics. Proceedings of the International Conference, P113

[4] ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].

CAPASSO, F ;

TSANG, WT ;

HUTCHINSON, AL ;

WILLIAMS, GF .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40

[5]

Capasso F., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P282

[6]

DOHLER GH, 1987, CRC CR REV SOL STATE, V13, P97

[7] MESSUNG DES GYROMAGNETISCHEN EFFEKTES AN MAKROSKOPISCHEN UND MIKROSKOPISCHEN, SUPRALEITENDEN BLEIKUGELN [J].

DOLL, R .

ZEITSCHRIFT FUR PHYSIK, 1958, 153 (02) :207-236

[8] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J].

DORDA, G .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2053-&

[9] EFFECTIVE MASS CHANGE OF ELECTRONS IN SILICON INVERSION LAYERS OBSERVED BY PIEZORESISTANCE [J].

DORDA, G .

APPLIED PHYSICS LETTERS, 1970, 17 (09) :406-&

[10]

DORDA G, 1973, FESTKORPERPROBLEME, V13, P215

← 1 2 3 →