LOCATION OF [111] CONDUCTION BAND MINIMA IN GAXIN1-XSB ALLOY SYSTEM

被引：9

作者：

LORENZ, MR

MCGRODDY, JC

PLASKETT, TS

POROWSKI, S

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期

关键词：

D O I：

10.1147/rd.135.0583

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Pressure dependence of resistivity and optical absorption by conduction band electrons are used to determine position of 111 (L') conduction band minima in Ga In Sb alloy system; these experimental data permit more precise estimate of position of L//1 minima than had been possible using Gunn effect data alone.

引用

页码：583 / &

共 8 条

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