PROGRESS IN STUDY ON NEW PIEZOELECTRIC CERAMICS WITH HIGH K(T)

The first paper1 which was presented on ISAF' 90 reported the high K(t) performance of the PZT ceramics with the compositions situated near the ferroelectric (F) and antiferroelectric (AF) phase boundary. In this paper, other two systems PSZT and PLZT ceramics also on F-AF phase boundary were studied and the same character which shows the high K(t) for the composition situated near the phase boundary has been examined. The highest K(t) is up to 0,56. In case of favorable poling condition and additives, even higher value of K(t) can be expected. The possible reasons for this character are discussed.