DIELECTRIC-RELAXATION OF POLY(PHENYLENE SULFIDE) CONTAINING A FRACTION OF RIGID AMORPHOUS PHASE

The dielectric relaxation behavior of poly(phenylene sulfide), PPS, has been investigated from room temperature to 180-degrees-C. This study was undertaken to examine the mobility of the amorphous phase through the glass transition region, to determine the contribution that rigid amorphous phase material makes to the relaxation process. Semicrystalline samples contain a fraction of the rigid amorphous phase, which was determined from the heat capacity increment at the glass transition, using degree of crystallinity determined from x-ray scattering. In the dielectric experiment, we measured the temperature and frequency dependence of the real and imaginary parts of the dielectric function. epsilon" vs. epsilon' was used to determine the dielectric relaxation intensity, DELTA-epsilon = epsilon(s) - epsilon infinity, at temperatures above the glass transition. For amorphous PPS, DELTA-epsilon decreases as temperature increases, while for all semi-crystalline PPS, DELTA-epsilon increases with temperature. The ratio of semicrystalline intensity to amorphous intensity determines the total fraction of dipoles which are already relaxed at a given temperature. Results indicate that more and more rigid amorphous phase material relaxes as the temperature is increased. This provides the first evidence that rigid amorphous phase material in PPS contains chains that possess different levels of molecular mobility. Finally, to the temperature of the loss peak maximum, at a given frequency, we assign the value of the dielectric T(g). For both melt and cold crystallization, the dielectric T(g) systematically decreases as the crystallization temperature increases, and as the fraction of rigid amorphous phase decreases.