LOGARITHMIC TEMPERATURE-DEPENDENCE OF RESISTIVITY IN HEAVILY DOPED CONDUCTING POLYMERS AT LOW-TEMPERATURE

被引:134
作者
ISHIGURO, T
KANEKO, H
NOGAMI, Y
ISHIMOTO, H
NISHIYAMA, H
TSUKAMOTO, J
TAKAHASHI, A
YAMAURA, M
HAGIWARA, T
SATO, K
机构
[1] TOKYO INST TECHNOL,DEPT APPL PHYS,MEGURO KU,TOKYO 152,JAPAN
[2] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
[3] TORAY LTD,POLYMER RES LAB,OTSU 520,JAPAN
[4] TOKYO RES CTR TEIJIN LTD,HINO,TOKYO 191,JAPAN
关键词
D O I
10.1103/PhysRevLett.69.660
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Electrical resistivities of heavily doped polyacetylene and polypyrrole exhibit a wide range of temperature variation as a function of the degree of disorder. Thermal activation behavior is found for the strongly disordered state, while a weak temperature dependence down to the mK region is found for the weakly disordered state. In the intermediate region we found the resistivity represented by a logT dependence, in a manner similar to amorphous metals. As a cause of the logT dependence, the possibility of scattering via interaction with molecular configurations possessing low-energy internal degrees of freedom is considered.
引用
收藏
页码:660 / 663
页数:4
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