DECOMPOSITION CHEMISTRY OF TETRAETHOXYSILANE

[1] Adams A. C., 1983, VLSI technology, P93

[2] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1042 - 1046

[3] LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1555 - 1563

[4] DC DIELECTRIC-BREAKDOWN IN SIO2-FILMS PREPARED BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1986, 143 (02) : 109 - 112

[5] COTTRELL TL, 1958, STRENGTH CHEM BONDS, P73

[6] EVERSTEIJN FC, 1966, PHILIPS RES REP, V21, P379

[7] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P151

[8] GUSELNIKOV L, 1974, RUSS CHEM REV, V43, P620

[9] HETEROGENEOUS KINETICS AND MASS-TRANSPORT IN CHEMICAL VAPOR-DEPOSITION PROCESSES .1. THEORETICAL DISCUSSION [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (03) : 249 - 281

[10] MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 658 - 662

[1] Adams A. C., 1983, VLSI technology, P93

[2] DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1042 - 1046

[3] LOW-PRESSURE DEPOSITION OF HIGH-QUALITY SIO2-FILMS BY PYROLYSIS OF TETRAETHYLORTHOSILICATE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1555 - 1563

[4] DC DIELECTRIC-BREAKDOWN IN SIO2-FILMS PREPARED BY LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION [J]. THIN SOLID FILMS, 1986, 143 (02) : 109 - 112

[5] COTTRELL TL, 1958, STRENGTH CHEM BONDS, P73

[6] EVERSTEIJN FC, 1966, PHILIPS RES REP, V21, P379

[7] GROVE AS, 1967, PHYSICS TECHNOLOGY S, P151

[8] GUSELNIKOV L, 1974, RUSS CHEM REV, V43, P620

[9] HETEROGENEOUS KINETICS AND MASS-TRANSPORT IN CHEMICAL VAPOR-DEPOSITION PROCESSES .1. THEORETICAL DISCUSSION [J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1981, 4 (03) : 249 - 281

[10] MODELING OF LOW-PRESSURE DEPOSITION OF SIO2 BY DECOMPOSITION OF TEOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 658 - 662