PRECIPITATION OF COBALT IN SILICON STUDIED BY MOSSBAUER-SPECTROSCOPY

被引：21

作者：

BERGHOLZ, W ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] SONDERFORSCHUNGSBEREICH 126,D-3400 GOTTINGEN,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1002/pssa.2210490209

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：489 / 498

页数：10

共 42 条

[1]

BAKHADYR.MK, 1970, FIZ TVERD TELA+, V11, P3076

[2] FE-57 MOSSBAUER SPECTRA IN COPPER DOPED SILICON [J].

BEMSKI, G ;

GONZALEZ, F ;

PEYRE, JJ .

PHYSICS LETTERS A, 1970, A 32 (04) :231-&

[3]

BERGHOLZ W, 1975, P INT C MOSSBAUER SP, V1, P215

[4]

BERGHOLZ W, 1978, THESIS GOTTINGEN

[5]

BOLTAKS BI, 1972, FIZ TVERD TELA+, V13, P2358

[6] RECOMBINATION MECHANISMS [J].

BONCH-BRUEVICH, VL ;

LANDSBERG, EG .

PHYSICA STATUS SOLIDI, 1968, 29 (01) :9-+

[7] PROPERTIES OF SILICON DOPED WITH IRON OR COPPER [J].

COLLINS, CB ;

CARLSON, RO .

PHYSICAL REVIEW, 1957, 108 (06) :1409-1414

[8]

DANON J, 1966, INT AT ENERGY AGE NC, V50, P89

[9]

DEKOCK AJR, 1972, PHILIPS RES DEPT S1, P1

[10] QUENCHED-IN LEVELS IN P-TYPE SILICON [J].

ELSTNER, L ;

KAMPRATH, W .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :541-&

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