OPTICAL-ABSORPTION NEAR EXCITONIC RESONANCE OF MOCVD-GROWN ZNSE SINGLE-CRYSTALS

被引:6
作者
GRIBKOVSKII, VP [1 ]
ZIMIN, LG [1 ]
GAPONENKO, SV [1 ]
MALINOVSKII, IE [1 ]
KUZNETSOV, PI [1 ]
YAKUSHCHEVA, GG [1 ]
机构
[1] ACAD SCI USSR,INST RADIOENGN & ELECTR,MOSCOW V-71,USSR
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1990年 / 158卷 / 01期
关键词
D O I
10.1002/pssb.2221580136
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The exciton and band‐to‐band absorption spectra of monocrystalline ZnSe films produced by MOCVD‐technique on GaAs substrates are studied in the temperature interval 80 to 300 K by laser spectroscopy technique. Violation of the Bouguer law and the temperature dependence of the integral absorption coefficient in the region of the excitonic band are revealed. The distinctive features of the transmission spectra near the excitonic resonance are interpreted in terms of the polaritonic approach to light propagation in crystals. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:359 / 366
页数:8
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