ELECTRONIC-STRUCTURE OF BETA-FESI2

被引：414

作者：

CHRISTENSEN, NE ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.42.7148

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ab initio calculations of the electronic structure of -FeSi2 show that this material, in agreement with experiment, is a semiconductor. The calculated hole and electron masses of the band-edge states are 0.8m0. A particularly strong coupling of the band-edge states to the lattice is suggested. This may cause the mobilities, even in pure -FeSi2 samples, to be very low at ambient temperature. © 1990 The American Physical Society.

引用

页码：7148 / 7153

页数：6

共 35 条

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