THE GAALASSB QUATERNARY AND GAALSB TERNARY ALLOYS AND THEIR APPLICATION TO INFRARED DETECTORS

被引：69

作者：

LAW, HD ^{[1
]}

CHIN, R ^{[1
]}

NAKANO, K ^{[1
]}

MILANO, RA ^{[1
]}

机构：

[1] ROCKWELL INT,RES CTR,THOUSAND OAKS,CA 91360

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071074

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：275 / 283

页数：9

相关论文

共 36 条

[1] ANDERSON SJ, 1977, 33B I PHYS C SER, P346
[2] ANTYPAS GA, 1973, J ELECTROCHEM SOC, V120, P1547
[3] ARMIENTO CA, 1979, APPL PHYS LETT, V35, P33
[4] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[5] CHENG KY, 1976, B AM PHYS SOC, V21, P365
[6] ARSENIC AND GALLIUM DISTRIBUTION COEFFICIENTS IN LIQUID-PHASE EPITAXIAL GAXIN1-XPYAS1-Y
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (06) : 388 - 390
[7] LIQUID-PHASE EPITAXIAL-GROWTH OF LATTICE-MATCHED INGAASP ON (100)-INP FOR 1.15-1.31-MU-M SPECTRAL REGION
FENG, M
WINDHORN, TH
TASHIMA, MM
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 758 - 761
[8] INFLUENCE OF GROWTH-SOLUTION DOPANTS ON DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF INGAASP
FENG, M
TASHIMA, MM
COOK, LW
MILANO, RA
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 91 - 93
[9] SPECTRAL LOSSES OF LOW-OH-CONTENT OPTICAL FIBERS
HORIGUCHI, M
OSANAI, H
[J]. ELECTRONICS LETTERS, 1976, 12 (12) : 310 - 312
[10] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711

← 1 2 3 4 →