PROPERTIES OF P-TYPE GAAS PREPARED BY COPPER DIFFUSION

[1] BOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[2] BROOKS H, 1954, PHYS REV, V93, P693

[3] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[4] BUBE RH, 1959, COMMUNICATION SEP

[5] CUNNEL FA, 1959, SERL TECH J, V9, P104

[6] EDMOND JT, 1957, REPORT M SEMICONDUCT, P109

[7] FOLBERTH DG, 1955, Z NATURFORSCH A, V10, P615

[8] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[9] THE STATUS OF TRANSISTOR RESEARCH IN COMPOUND SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 959 - 968

[10] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420

[1] BOOMGAARD J, 1957, PHILIPS RES REP, V12, P127

[2] BROOKS H, 1954, PHYS REV, V93, P693

[3] PHOTOELECTRONIC ANALYSIS OF HIGH RESISTIVITY CRYSTALS - (A) GAAS, (B) SB2S3 [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 315 - 322

[4] BUBE RH, 1959, COMMUNICATION SEP

[5] CUNNEL FA, 1959, SERL TECH J, V9, P104

[6] EDMOND JT, 1957, REPORT M SEMICONDUCT, P109

[7] FOLBERTH DG, 1955, Z NATURFORSCH A, V10, P615

[8] DIFFUSION, SOLUBILITY, AND ELECTRICAL BEHAVIOR OF COPPER IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (2-3) : 173 - &

[9] THE STATUS OF TRANSISTOR RESEARCH IN COMPOUND SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 959 - 968

[10] Shockley W., 1952, PHYS TODAY, V5, P18, DOI DOI 10.1063/1.3067420