CRYSTALLOGRAPHY OF EPITAXIAL-GROWTH OF WURTZITE-TYPE THIN-FILMS ON SAPPHIRE SUBSTRATES

被引：81

作者：

KUNG, P

SUN, CJ

SAXLER, A

OHSATO, H

RAZEGHI, M

机构：

[1] Center for Quantum Devices, Electrical Engineering and Computer Science Department, Northwestern University, Evanston

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.355943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire, (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00.1)Al2O3 have a better epilayer-substrate interface quality than those grown on (01.2)Al2O3. We also show the epilayer grown on (00.1)Al2O3 are gallium-terminated, and both (00.1) and (01.2) surfaces of sapphire crystals are oxygen-terminated.

引用

页码：4515 / 4519

页数：5

共 13 条

[1] THE USE OF IONIZATION POTENTIALS .1. IONIC RADII OF THE ELEMENTS [J].

AHRENS, LH .

GEOCHIMICA ET COSMOCHIMICA ACTA, 1952, 2 (03) :155-169

[2]

Evans R.C., 1964, INTRO CRYSTAL CHEM, P180

[3]

Hellwege K. -H., 1982, NUMERICAL DATA FUNCT, V17

[4]

Henini M., 1992, Microelectronics Journal, V23, P500, DOI 10.1016/0026-2692(92)90059-A

[5] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

KOSICKI, BB ;

KAHNG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :593-&

[6]

MANASEVIT HM, 1965, T METALL SOC AIME, V233, P540

[7]

MANASEVIT HM, 1968, T METALL SOC AIME, V242, P465

[8]

NOLDER R, 1965, T METALL SOC AIME, V233, P549

[9] HETEROEPITAXIAL WURTZITE AND ZINCBLENDE STRUCTURE GAN GROWN BY REACTIVE-ION MOLECULAR-BEAM EPITAXY - GROWTH-KINETICS, MICROSTRUCTURE, AND PROPERTIES [J].

POWELL, RC ;

LEE, NE ;

KIM, YW ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :189-204

[10] SUBSTRATE-ORIENTATION DEPENDENCE OF GAN SINGLE-CRYSTAL FILMS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

SASAKI, T ;

ZEMBUTSU, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) :2533-2540

← 1 2 →