MEASUREMENT OF HETEROJUNCTION BAND OFFSETS USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：41

作者：

OSHEA, JJ ^{[1
]}

SAJOTO, T ^{[1
]}

BHARGAVA, S ^{[1
]}

LEONARD, D ^{[1
]}

CHIN, MA ^{[1
]}

NARAYANAMURTI, V ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.587221

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ballistic electron emission microscopy (BEEM) has been used to study electron transport across single barrier AlxGa1-xAs/GaAs heterostructures. The structures, grown by molecular beam epitaxy, utilized a p-type delta-doped sheet to cancel the band bending near the Schottky interface, enabling a direct measurement of the conduction band offset at room temperature. The band offset at room temperature for x=0.21 is 0.19 eV and for x=0.42 is 0.33 eV. Measurements at 77 K gave values of 0.20 eV for x=0.21 and 0.35 eV for x=0.42. These results demonstrate that BEEM can be used to probe the transport properties of semiconductor heterostructures which are spatially beneath the Schottky barrier.

引用

页码：2625 / 2628

页数：4

共 12 条

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